3VD396500YL 3VD396500YL high voltage mosfet chips description ? 3VD396500YL is a high voltage n-channel enhancement mode power mos-fet chip fabricated in advanced silicon epitaxial planar technology; ? advanced termination scheme to provide enhanced voltage-blocking capability; ? avalanche energy specified; ? source-to-drain diode recovery time comparable to a discrete fast recovery diode; ? the chips may packaged in to-220 type and the typical equivalent product is 840; ? the packaged product is widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers; ? die size: 4.13mm*3.98mm; ? chip thickness: 30020 m; ? top metal: al, ba ckside metal: ag. chip topography absolute maximum ratings (t amb =25 c) parameter symbo l ratings unit drain-source voltage v ds 500 v gate-source vo ltage v 20 gs v drain current i d 8.0 a power dissipation (to-220 packag e) p d 74 w operation junction tem perature t j -55 +150 c storage temperature t stg -55 +150 c electrical characteristics (t =25 c) amb parameter test condition s min. s ymbol typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 500 - - v gate threshold voltage v th v gs = v ds , i d =250a 2 .0 - 4.0 v drain-source leakage current i dss v ds =500v, v =0v - - 1.0 a gs static drain- source on state r ds(on) v gs =10v, i d =4.0a - 0.76 0.9 resistance gate-source leakage current i gss v gs =30v, v ds =0v - - 100 na source-d rain diode forward on e v fsd i s =8.0a, v gs =0v - - 1.4 v voltag hangzhou silan microelectronics co.,ltd rev:1.0 2008.07.28 http://www.silan.com.cn page 1 of 1
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